RB095T-40 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode

Diodes
zElectrical characteristic curves
10
1000000
Ta= 1 5 0 ℃
100000
1 ^Ta=125℃
Ta= 7 5 ℃
0.1
Ta= - 2 5 ℃
Ta= 2 5 ℃
10000
1000
100
10
1
0.1
0.01
0
100 200 300 400 500 600 700
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.01
0
Ta=150℃ Ta=125℃
Ta= 7 5 ℃
Ta= 2 5 ℃
Ta= - 2 5 ℃
5 10 15 20 25 30 35 40
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1000
100
10
1
0
RB095T-40
f=1MHz
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
500
200
Ta= 2 5 ℃
IF= 3 A
180
490
n = 3 0 pc s
160
140
480
120
100
470
80
60
460
A V E:4 7 2 .9 m V
40
20
450
0
VF DISPERSION MAP
Ta= 2 5 ℃
650
VR=40V
640
n = 3 0 pc s
630
620
610
600
590
580
AVE:14.2uA
570
560
550
IR DISPERSION MAP
Ta= 2 5 ℃
f=1MHz
VR=0V
n = 1 0 pc s
A V E:6 1 7 .9 pF
Ct DISPERSION MAP
300
30
250
Ifsm
1 c yc
25
200
8.3ms
20
150
15
Ta= 2 5 ℃
IF= 0 .5 A
IR = 1 A
Irr= 0 .2 5 * IR
n = 1 0 pc s
1000
100
Ifsm
8.3ms 8.3ms
1 c yc
100
10
50
AVE:178.0A
0
IFSM DISRESION MAP
5
AVE:11.40ns
0
trr DISPERSION MAP
10
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
100
Ifsm
t
100
IM=100mA
IF=3A
1ms time
10
300us
1
10
R th ( j- a)
R th ( j- c )
D=1/2
DC
5
Sin ( θ ＝ 1 8 0 )
10
1
10
TIM E:t(m s)
IFSM-t CHARACTERISTICS
0.1
100
0.001
0.1
10
TIM E:t( s)
Rth-t CHARACTERISTICS
0
1000
0
2
4
6
8
10
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
Rev.B
2/3