RB095T-40 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB095T-40
RB095T-40
zApplications
Switching power supply
zFeatures
1) Cathode common type.
(TO-220)
2) Low IR
3) High reliability
zConstruction
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
zStructure
10.0±0.3
　　　 0.1
4.5±0.3
　　　 0.1
2.8±0.2
　　　 0.1
①
1.2
1.3
0.8
(1) (2) (3)
ROHM : ï¼´O220FN
① ^{Manufacture Date}
0.7±0.1
0.05
2.6±0.5
zAbsolute maximum ratings (Ta=25°C)
Param eter
Sym bol
Lim its
Unit
Revers e voltage (repetitive peak)
V_RM
45
V
Revers e voltage (DC)
V_R
40
V
Average rectified forward current
Io
6
A
Forward current s urge peak （60Hz・1cyc）（*1）
I_FSM
100
A
Junction tem perature
Tj
150
℃
Storage tem perature
Ts tg
-40 to +150
℃
(*1)Tc=100℃m ax Per chip : Io/2
zElectrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol Min.
V_F
-
I_R
-
θjc
-
Typ. Max.
-
0.55
-
10
-
3.0
Unit
V
mA
℃/W
Conditions
I_F=3A
V_R=40V
junction to case
Rev.B
1/3