RB095B-30_11 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier Diode

RB095B-30
　
Data Sheet
10
Ta=150C
Ta=125C
1
Ta=75C
Ta=25C
Ta=-25C
1000000
100000
10000
1000
100
0.1
10
1
0.01
0
100 200 300 400 500 600 700
FORWARD VOLTAGE : V_F(mV)
V_F-I_F CHARACTERISTICS
0.1
0.01
0
Ta=150C
Ta=125C
Ta=75C
Ta=25C
Ta=-25C
5
10
15
20
25
30
REVERSE VOLTAGE : V_R(V)
V_R-I_R CHARACTERISTICS
440
200
430
Ta=25C
I_F=3A
180
n=30pcs
160
140
420
120
100
410
AVE:402.0mV
80
60
400
40
20
390
0
Ta=25C
V_R=30V
n=30pcs
AVE:41.0A
V_F DISPERSION MAP
I_R DISPERSION MAP
10000
1000
f=1MHz
100
10
0
5
10
15
20
25
30
REVERSE VOLTAGE : V_R(V)
V_R-Ct CHARACTERISTICS
2000
1950
1900
1850
1800
1750
1700
1650
1600
1550
1500
Ta=25C
f=1MHz
V_R=0V
n=10pcs
AVE:1617.3pF
Ct DISPERSION MAP
300
250
200
150
100
50
0
1000
100
10
1
30
Ifsm
1cyc
25
8.3ms
20
15
AVE:63.0A
10
AVE:19.3ns
Ta=25C
I_F=0.5A
I_R=1A
Irr=0.25*I_R
n=10pcs
5
I_FSM DISPERSION MAP
0
trr DISPERSION MAP
Ifsm
t
10
TIME : t(ms)
I_FSM-t CHARACTERISTICS
100
Rth(j-a)
10
Rth(j-c)
Mounted on epoxy board
1
IM=100mA
I_F=3A
1ms time
300s
0.1
100
0.001 0.01 0.1
1
10
100 1000
TIME : t(s)
Rth-t CHARACTERISTICS
1000
100
Ifsm
8.3ms 8.3ms
1cyc
10
1
10
100
NUMBER OF CYCLES
I_FSM-CYCLE CHARACTERISTICS
5
4
3
Sin(=180)
D=1/2
DC
2
1
0
0
5
10
15
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
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2011.04 - Rev.F