RB095B-30_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier Diode

Schottky barrier Diode
RB095B-30
Applications
General rectification
Dimensions(Unit : mm)
Features
1)Power mold type.(CPD)
2)Low V_F
3)High reliability
Construction
Silicon epitaxial planar
Data Sheet
Land size figure(Unit : mm)
6.0
1 6 1.6
CPD 2.3 2.
Structure
(2)
Taping dimensions(Unit : mm)
(1) (3)
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
35
V
Reverse voltage (DC)
V_R
30
V
Average rectified forward current(*1)
Io
6
A
Forward current surge peak (60Hz・1cyc)(*1)
I_FSM
35
A
Junction temperature
Tj
150
C
Storage temperature
Tstg
40 to 150
C
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=125C
Electrical characteristic (Ta=25C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol Min.
V_F
-
I_R
-
jc
-
Typ. Max.
- 0.425
-
200
-
6.0
Unit
V
μA
C/W
Conditions
I_F=3.0A
V_R=30V
junction to case
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2011.04 - Rev.F