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RB095B-30_09 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier Diode
RB095B-30
 
Data Sheet
10
Ta=150°C
Ta=125°C
1
Ta=75°C
Ta=25°C
Ta=-25°C
1000000
100000
10000
1000
100
10
0.1
1
0.01
0
100 200 300 400 500 600 700
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
0.1
0.01
0
Ta=150°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
5
10 15 20 25 30
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
10000
1000
f=1MHz
100
10
0
5
10
15
20
25
30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
440
200
2000
430
Ta=25°C
IF=3A
180
n=30pcs
160
Ta=25°C
VR=30V
n=30pcs
1950
1900
Ta=25°C
f=1MHz
VR=0V
140
1850
n=10pcs
420
120
1800
410
AVE:402.0mV
100
80
AVE:41.0µA
60
1750
1700
1650
AVE:1617.3pF
400
40
1600
20
1550
390
VF DISPERSION MAP
0
IR DISPERSION MAP
1500
Ct DISPERSION MAP
300
250
200
150
100
50
0
1000
100
10
1
30
Ifsm
1cyc
25
8.3ms
20
15
AVE:63.0A
10
AVE:19.3ns
Ta=25°C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
5
IFSM DISPERSION MAP
0
trr DISPERSION MAP
Ifsm
t
10
TIME : t(ms)
IFSM-t CHARACTERISTICS
100
Rth(j-a)
10
Rth(j-c)
Mounted on epoxy board
1
IM=100mA
IF=3A
1ms time
300µs
0.1
100
0.001 0.01 0.1
1
10 100 1000
TIME : t(s)
Rth-t CHARACTERISTICS
1000
100
Ifsm
8.3ms 8.3ms
1cyc
10
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
5
4
3
Sin(θ=180)
D=1/2
DC
2
1
0
0
5
10
15
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
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2009.11 - Rev.F