RB095B-30_09 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier Diode

Schottky barrier Diode
RB095B-30
zApplications
General rectification
zDimensions(Unit : mm)
zFeatures
1)Power mold type.(CPD)
2)Low V_F
3)High reliability
zConstruction
Silicon epitaxial planar
zLand size figure(Unit : mm)
6.0
1 6 1.6
CPD 2.3 2.3
zStructure

(2)
zTaping dimensions(Unit : mm)
(1) (3)
zAbsolute maximum ratings(Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
35
V
Reverse voltage (DC)
V_R
30
V
Average rectified forward current(*1)
Io
6
A
Forward current surge peak (60Hzɾ1cyc)(*1) I_FSM
35
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-40 to +150
°C
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=12°5C
zElectrical characteristic(Ta=25°C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol Min. Typ. Max.
Unit
Conditions
V_F
-
- 0.425
V
I_F=3.0A
I_R
-
-
200
µA
V_R=30V
θjc
-
-
6.0
°C/W junction to case
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2009.11 - Rev.F