RB095B-30 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode

Diodes
RB095B-30
zElectrical characteristic curves
10
Ta=150℃
Ta=125℃
1
Ta=75℃
Ta=25℃
Ta=-25℃
1000000
100000
10000
1000
100
0.1
10
1
0.01
0
100 200 300 400 500 600 700
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.1
0.01
0
Ta=150℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
5 10 15 20 25 30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
10000
1000
条件：f=1MHz
f=1MHz
100
10
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
440
200
Ta=25℃
IF=3A
180
430
n=30pcs
160
140
420
120
100
410
AVE:402.0mV
80
60
400
40
20
390
0
Ta=25℃
VR=30V
n=30pcs
AVE:41.0uA
2000
1950
1900
1850
1800
1750
1700
1650
1600
1550
1500
Ta=25℃
f=1MHz
VR=0V
n=10pcs
AVE:1617.3pF
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
300
250
200
150
100
50
0
1000
100
Ifsm
1cyc
8.3ms
AVE:63.0A
IFSM DISRESION MAP
Ifsm
t
30
Ta=25℃
25
IF=0.5A
IR=1A
Irr=0.25*IR
20
n=10pcs
15
AVE:19.3ns
10
5
0
trr DISPERSION MAP
Mounted on epoxy board
100
IM=100mA
IF=3A
1ms time
300us
10
Rth(j-a)
Rth(j-c)
1
10
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.1
100
0.001
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
1000
Ifsm
8.3ms 8.3ms
1cyc
100
10
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
5
4
D=1/2
DC
3
Sin(θ＝180)
2
1
0
0
5
10
15
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
Rev.A
2/3