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| RB085T-60 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode | |||
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Diodes
RB085T-60
zElectrical characteristic curves
10
Ta=150â
Ta=125â
1
Ta=75â
Ta=25â
100000
10000
1000
100
Ta=-25â
10
0.1
1
0.01
0
100 200 300 400 500 600
FORWARD VOLTAGEï¼VF(mV)
VF-IF CHARACTERISTICS
0.1
0.01
0
Ta=150â
Ta=125â
Ta=75â
Ta=25â
Ta=-25â
10 20 30 40 50 60
REVERSE VOLTAGEï¼VR(V)
VR-IR CHARACTERISTICS
1000
100
f=1MHz
10
1
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
550
540
530
520
510
500
300
250
200
150
100
50
0
1000
100
300
Ta=25â
IF=5A
250
n=30pcs
200
TTaVaR===223550âVâ
f=n1=3M0pHcsz
VR=0V
n=30pcs
150
AVE:532.6mV
100
AVE:36.7uA
AVE:8.172uA
Ï:1.9469uA
50
0
VF DISPERSION MAP
IR DISPERSION MAP
Ifsm
1cyc
8.3ms
AVE:236.0A
IFSM DISRESION MAP
Ifsm
t
30
Ta=25â
25
IF=0.5A
IR=1A
20
Irr=0.25*IR
n=10pcs
15
10
5
AVE:9.30ns
0
trr DISPERSION MAP
Mounted on epoxy board
100
IM=100mA
IF=5A
time
300us
10
1ms
Rth(j-a)
1
Rth(j-c)
800
790
Ta=25â
f=1MHz
780
VR=0V
770
n=10pcs
760
750
740
730
720
710
AVE:738.5pF
700
Ct DISPERSION MAP
1000
100
Ifsm
8.3ms 8.3ms
1cyc
10
1
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
15
D=1/2
DC
Sin(θï¼180)
10
5
10
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.1
0.001
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0
0
5
10
15
20
AVERAGE RECTIFIED
FORWARD CURRENTï¼Io(A)
Io-Pf CHARACTERISTICS
Rev.A
2/3
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