RB085T-60 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB085T-60
zApplications
Switching power supply
zFeatures
1) Cathode common type.
(TO-220)
2) Low IR
3) High reliability
zConstruction
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
9.9
0.8
10.0
10.0±0.3
　　　 0.1
7.0±0.3
　　　 0.1
4.5±0.3
　　　 0.1
2.8±0.2
1　.1　　 ^0.1
φ3.1±0.1
7.2
φ1.2
①
1.2
1.3
0.8
(1) (2) (3)
2.54±0.5 2.54±0.5
0.7±0.015
7.0
2.6±0.03
0.8
7.2
3-φ1.2
ROHM : ï¼´O220FN
① ^{Manufacture Date}
RB085T-60
zStructure
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
60
V
Reverse voltage (DC)
V_R
60
V
Average rectified forward current（*1）
Io
10
A
Forward current surge peak （60Hz・1cyc）（*1） I_FSM
100
A
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-40 to +150
℃
(*1)Tc=100℃max Per chip : Io/2
zElectrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reserve current
Thermal impedance
Symbol Min. Typ. Max.
V_F
-
-
0.58
I_R
-
-
300
θjc
-
-
2.5
Unit
V
µA
℃/W
Conditions
I_F=5A
V_R=60V
junction to case
Rev.A
1/3