RB085B-90 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode

Diodes
RB085B-90
zElectrical characteristic curves
10
Ta=150℃
Ta=125℃
1
Ta=75℃
0.1
Ta=25℃
Ta=-25℃
0.01
0.001
0
100 200 300 400 500 600 700 800 900
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
100000
10000
Ta=150℃
Ta=125℃
1000
100
10
1
Ta=75℃
Ta=25℃
Ta=-25℃
0.1
0.01
0
10 20 30 40 50 60 70 80 90
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1000
100
f=1MHz
10
1
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
790
200
Ta=_T2_a5℃_=25℃
180
780
nI=F3=01^Ip0^FcAs^=5A
n=30pcs
160
140
550
Ta=25℃
540
VR=90V
530
n=30pcs
520
Ta=25℃
f=1MHz
VR=0V
n=10pcs
770
120
510
100
500
760
80
490
60
480
750
Aσ_AV_V:E1:.7E713:50₇.17_6mm6VV.6mV
740
40
AVE:14.3uA
20
0
470
AVE:498.5pF
460
450
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
300
250
200
150
100
50
0
1000
100
Ifsm
1cyc
8.3ms
AVE:136.0A
IFSM DISRESION MAP
Ifsm
t
30
Ta=25℃
25
IF=0.5A
IR=1A
Irr=0.25*IR
20
n=10pcs
15
10
5
AVE:7.40ns
0
trr DISPERSION MAP
Mounted on epoxy board
100 ^IM=100mA
IF=5A
1ms time
300us
10
Rth(j-a)
Rth(j-c)
1
1000
100
Ifsm
8.3ms 8.3ms
1cyc
10
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
15
D=1/2
10
DC
Sin(θ＝180)
5
10
0.1
0
1
10
TIME:t(ms)
100
0.001 0.01 0.1 _TIME:1_t(s) 10 100 1000
0
5
10
15
20
AVERAGE RECTIFIED
IFSM-t CHARACTERISTICS
Rth-t CHARACTERISTICS
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
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