|
RB085B-90 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode | |||
|
Diodes
Schottky barrier diode
RB085B-90
RB085B-90
zApplications
General rectification
zDimensions (Unit : mm)
zLand size figure (Unit : mm)
6.0
zFeatures
1) Power mold type. (CPD)
2) Low VF
3) High reliability
zConstruction
Silicon epitaxial planar
6.5±0.2
5.1±0.2
ããã 0.1
C0.5
2.3±0.2
ããã 0.1
0.5±0.1
1.6 1.6
â
0.9
ï¼1ï¼ ï¼2ï¼
0.75
ï¼3ï¼ 0.65±0.1
2.3±0.2 2.3±0.2
0.5±0.1
1.0±0.2
CPD 2.3 2.3
zStructure
ROHM : CPD
JEITA : SC-63
â Manufacture Date
zTaping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
8.0±0.1
Ï1.55±0.1
ããããã 0
0.4±0.1
TL
6.8±0.1
8.0±0.1
Ï3.0±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward currentï¼*1ï¼
Forward current surge peak ï¼60Hzã»1cycï¼ï¼*1ï¼
Junction temperature
Storage temperature
(*1)Rating of per diode : Io/2
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Limits
90
90
10
45
150
-40 to +150
2.7±0.2
Unit
V
V
A
A
â
â
zElectrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol Min. Typ. Max.
VF
-
- 0.83
IR
-
-
150
θjc
-
-
6.0
Unit
V
µA
â/W
Conditions
IF=5.0A
VR=90V
junction to case
1/3
|
▷ |