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RB085B-30_09 Datasheet, PDF (2/4 Pages) Rohm – Schottky Barrier Diode
RB085B-30
 
zElectrical characteristics curves
Data Sheet
10
1000000
Ta=150°C
Ta=125°C
1
Ta=75°C
Ta=25°C
Ta=-25°C
100000
10000
1000
100
10
0.1
1
0.1
0.01
0
100 200 300 400 500 600 700
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
0.01
0
Ta=150°C Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25・C
5
10 15 20 25 30
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
10000
1000
f=1MHz
100
10
0
10
20
30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
460
200
Ta=25°C
180
450
IF=4A
160
n=30pcs
140
440
120
100
430
80
60
420
AVE:429.3mV
40
20
410
0
Ta=25°C
VR=30V
n=30pcs
AVE:41.0uA
2000
1950
1900
1850
1800
1750
1700
1650
1600
1550
1500
Ta=25°C
f=1MHz
VR=0V
n=10pcs
AVE:1617.3pF
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
300
250
200
150
100
50
0
1000
100
10
1
Ifsm
1cyc
8.3ms
AVE:63.0A
IFSM DISPERSION MAP
Ifsm
t
10
100
TIME : t(ms)
IFSM-t CHARACTERISTICS
30
Ta=25℃
25
IF=0.5A
IR=1A
20
Irr=0.25*IR
n=10pcs
15
AVE:19.3ns
10
5
0
trr DISPERSION MAP
Mounted on a epoxy board
IM=100mA
100
IF=5A
1ms time
300us
Rth(j-a)
10
Rth(j-c)
1
0.1
0.001
0.01 0.1
1
10 100
TIME : t(s)
Rth-t CHARACTERISTICS
1000
1000
100
Ifsm
8.3ms 8.3ms
1cyc
10
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
5
4
3
Sin(θ=180)
2
D=1/2
DC
1
0
0
5
10
15
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
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2009.11 - Rev.E