RB085B-30_09 Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB085B-30
zApplications
General rectification
zFeatures
1)Power mold type.(CPD)
2)Low V_F
3)High reliability
zDimensions(Unit : mm)
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zConstruction
Silicon epitaxial planar
zLand size figure(Unit : mm)
6.0
1.6 1.6
CPD _{2.3 2.3}
zStructure
(2)
(1) (3)
zTaping specifications(Unit : mm)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
V_RM
35
Reverse voltage (DC)
V_R
30
Average rectified forward current(*1)
Io
10
Forward current surge peak (60Hz / 1cyc)(*1)
I_FSM
35
Junction temperature
Tj
150
Storage temperature
Tstg
-40 to +150
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=105°C
zElectrical characteristics(Ta=25°C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol Min. Typ. Max.
V_F
-
- 0.48
I_R
-
-
300
θjc
-
-
6.0
Unit
V
V
A
A
°C
°C
Unit
V
µA
°C/W
Conditions
I_F=4.0A
V_R=30V
junction to case
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2009.11 - Rev.E