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| RB075B40S Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode | |||
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Diodes
RB075B40S
zElectrical characteristic curves
10
1000000
Ta=150â
100000
Ta=125â
1
Ta=75â
Ta=25â
10000
1000
100
0.1
Ta=-25â
10
1
0.01
0
100 200 300 400 500 600 700
FORWARD VOLTAGEï¼VF(mV)
VF-IF CHARACTERISTICS
0.1
0
Ta=150â Ta=125â
Ta=75â
Ta=25â
Ta=-25â
5 10 15 20 25 30
REVERSE VOLTAGEï¼VR(V)
VR-IR CHARACTERISTICS
10000
1000
æ¡ä»¶f=ï¼f1=1MMHHzz
100
10
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
700
1000
650
690
Ta=2
T5aâ=25â
900
IIFF==35A
n=30pcs
800
700
Ta=25â
640
VR=40V
630
n=30pcs
620
Ta=25â
f=1MHz
VR=0V
n=10pcs
680
600
610
500
600
670
400
590
AVE:413.6mV
660
AVE:675.8mV
300
AVE:89.7nA
200
100
580
570
AVE:586.9pF
560
650
0
550
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
300
250
200
150
100
50
0
1000
100
10
1
Ifsm
1cyc
8.3ms
AVE:130.0A
IFSM DISPERSION MAP
Ifsm
t
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
30
1000
Ta=25â
Ifsm
IF=0.5A
25
IR=1A
Irr=0.25*IR
8.3ms 8.3ms
20
n=10pcs
1cyc
15
100
10
AVE:15.2ns
5
0
trr DISPERSION MAP
10
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
Rth(j-a)
10
Rth(j-c)
Mounted on epoxy board
1
IM=100mA
IF=1A
0.1
0.001
1ms time
300us
0.01 0.1 1 10 100
TIME:t(s)
Rth-t CHARACTERISTICS
1000
15
10
Sin(θï¼180)
5
D=1/2
DC
0
0
5
10
15
20
AVERAGE RECTIFIED
FORWARD CURRENTï¼Io(A)
Io-Pf CHARACTERISTICS
2/3
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