RB075B40S Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB075B40S
RB075B40S
zApplications
General rectification
zFeatures
1) Power mold type. (CPD)
2) Low IR
3) High reliability
zConstruction
Silicon epitaxial
zDimensions (Unit : mm)
6.5±0.2
C0.5
5.1±0.2
　　　 0.1
2.3±0.2
　　　 0.1
0.5±0.1
①
0.9
（1） （2） （3）
0.75
0.65±0.1
2.3±0.2 2.3±0.2
0.5±0.1
1.0±0.2
zLand size figure (Unit : mm)
6.0
1.6 1.6
CPD _{2.3 2.3}
zStructure
ROHM : CPD
JEITA : SC-63
① Manufacture Date
zTaping specifications (Unit : mm)
2.0±0.05
4.0±0.1
8.0±0.1
φ1.55±0.1
　　　　　 0
0.4±0.1
TL
6.8±0.1
8.0±0.1
φ3.0±0.1
2.7±0.2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
40
V
Reverse voltage (DC)
V_R
40
V
Average rectified forward current（*1）
Io
5
A
Forward current surge peak （60Hz・1cyc）
I_FSM
45
A
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-40 to +150
℃
(*1)Business frequencies,Rating of R-load,Tc=125℃ MAX
zElectrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
V_F
-
-
0.75
I_R
-
-
5.0
Unit
Conditions
V
I_F=5.0A
µA
V_R=40V
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