QS6U22_1 Datasheet, PDF (2/5 Pages) Rohm – 2.5V Drive Pch+SBD MOS FET

Transistors
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous
Pulsed
ID
IDP ^∗1
Source current
(Body diode)
Continuous
Pulsed
IS
ISP ^∗1
Channel temperature
Tch
Power dissipation
PD ^∗3
Limits
−20
±12
±1.5
±6.0
−0.75
−6.0
150
0.9
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
VRM
25
VR
20
IF
0.7
IFSM ^∗2
3.0
Tj
150
PD ^∗3
0.7
<MOSFET AND Di>
Total power dissipation
PD ^∗3
1.25
Range of Storage temperature
Tstg
−55 to +150
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc. ∗3 Mounted on a ceramic board
Unit
V
V
A
A
A
A
°C
W / ELEMENT
V
V
A
A
°C
W / ELEMENT
W / TOTAL
°C
zElectrical characteristics (Ta=25°C)
〈MOSFET〉
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 µA VGS=±12V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −20 −
−
V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS
−
−
−1 µA VDS= −20V, VGS=0V
Gate threshold voltage
VGS (th) −0.7 − −2.0 V VDS= −10V, ID= −1mA
−
Static drain-source on-state
resistance
RDS
∗
(on)
−
−
155 215 mΩ ID= −1.5A, VGS= −4.5V
170 235 mΩ ID= −1.5A, VGS= −4V
310 430 mΩ ID= −0.75A, VGS= −2.5V
Forward transfer admittance
Yfs ^∗ 1.0
−
−
S VDS= −10V, ID= −0.75A
Input capacitance
Ciss
− 270 −
pF VDS= −10V
Output capacitance
Coss
−
40
−
pF VGS=0V
Reverse transfer capacitance Crss
− 35 −
Turn-on delay time
td (on) ^∗ −
10
−
Rise time
tr ^∗ −
12
−
Turn-off delay time
td (off) ^∗
−
45
−
Fall time
tf ^∗ −
20
−
Total gate charge
Qg ^∗ −
3.0
−
Gate-source charge
Qgs ^∗ −
0.8
−
Gate-drain charge
Qgd ^∗ − 0.85 −
pF f=1MHz
ns ID= −0.75A
ns ^{VDD −15V}
VGS= −4.5V
ns _RL=20Ω
ns RG=10Ω
nC VDD −15V
nC
VGS= −4.5V
RL=10Ω / RG=10Ω
nC ID= −1.5A
∗Pulsed
〈Body diode (source−drain)〉
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
Conditions
VSD
−
− −1.2 V IS= −0.75A, VGS=0V
〈Di〉
Parameter
Forward voltage drop
Reverse current
Symbol Min.
VF
−
IR
−
Typ.
−
−
Max.
0.49
200
Unit
Conditions
V IF=0.7A
µA VR=20V
QS6U22
Rev.A
2/4