QS6U22_1 Datasheet, PDF (1/5 Pages) Rohm – 2.5V Drive Pch+SBD MOS FET

Transistors
2.5V Drive Pch+SBD MOS FET
QS6U22
QS6U22
zStructure
Silicon P-channel MOS FET
Schottky Barrier DIODE
zFeatures
1) The QS6U22 combines Pch MOS FET with a Schottky
barrier diode in a TSMT6 package.
2) Low on-state resistance with fast switching.
3) Low voltage drive (2.5V).
4) Built-in schottky barrier diode has low forward voltage.
zExternal dimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
(6) (5) (4)
1.0MAX
0.85
0.7
1pin mark
(1) (2) (3)
0.4
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : U22
zApplications
Load switch, DC / DC conversion
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
QS6U22
Taping
TR
3000
zEquivalent circuit
(6)
(5)
(4)
∗2
∗1
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Anode
(2) Source
(3) Gate
(3) _{(4) Drain}
(5) N / C
(6) Cathode
∗A protection diode has been in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
Rev.A
1/4