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| QS5Y2 Datasheet, PDF (2/8 Pages) Rohm – Midium Power Transistors (50V / 3A) | |||
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QS5Y2
ï¬Electrical characteristics (Ta=25°C)
ã<Tr.1>
Parameter
Symbol Min.
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter staturation voltage
DC current gain
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat*)1
hFE
-50
-50
-6
-
-
-
180
Transition frequency
fT *1
-
Collector output capacitance
Turn-on time
Storage time
Fall time
*1 Pulsed
*2 See switching time test circuit
Cob
-
ton *2
-
tstg *2
-
tf *2
-
ã<Tr.2>
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter staturation voltage
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
*1 Pulsed
*2 See switching time test circuit
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sa*t)1
hFE
fT *1
Min.
50
50
6
-
-
-
180
-
Cob
-
ton *2
-
tstg *2
-
tf *2
-
Data Sheet
Typ.
-
-
-
-
-
-200
-
300
24
45
250
35
Max.
-
-
-
-1
-1
-400
450
-
-
-
-
-
Unit
Conditions
V IC= -1mA
V IC= -100μA
V IE= -100μA
ïA VCB= -50V
ïA VEB= -4V
mV IC=-1A, IB=-50mA
- VCE= -3V, IC= -50mA
MHz
VCE= -10V
IE=500mA, f=100MHz
pF
VCB= -10V, IE=0A
f=1MHz
ns
ns
IC= -1.5A, IB1= -150mA,
IB2=150mA, VCC~_-12V
ns
Typ.
-
-
-
-
-
130
-
320
13
50
450
80
Max.
-
-
-
1
1
350
450
-
-
-
-
-
Unit
Conditions
V IC= 1mA
V IC= 100μA
V IE= 100μA
ïA VCB= 50V
ïA VEB= 4V
mV IC= 1A, IB= 50mA
- VCE= 3V, IC= 50mA
MHz
VCE= 10V
IE=-500mA, f=100MHz
pF
VCB= 10V, IE=0A
f=1MHz
ns
ns
IC= 1.5A, IB1= 150mA,
IB2=-150mA, VCC~_12V
ns
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©2010 ROHM Co., Ltd. All rights reserved.
2/7
2010.11 - Rev.A
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