QS5Y2 Datasheet, PDF (1/8 Pages) Rohm – Midium Power Transistors (50V / 3A)

Midium Power Transistors (±50V / ±3A)
QS5Y2
 Structure
NPN/PNP Silicon epitaxial planar transistor
 Dimensions (Unit : mm)
TSMT5
 Features
1) Low saturation voltage, typically
V_{CE (sat)} = -0.40V (Max.) (I_C / I_B= -1A / -50mA)
V_{CE (sat)} = 0.35V (Max.) (I_C / I_B= ₁A / 50mA)
2) High speed switching
 Applications
Low Frequency Amplifier
Driver
(1) Base
(2) Collector
(3) Emitter
Abbreviated symbol : Y02
 Packaging specifications
Type
Package
TSMT5
Code
TR
Basic ordering unit (pieces) 3000
 Absolute maximum ratings (Ta = 25C)
　<Tr.1>
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
V_CBO
V_CEO
V_EBO
I_C
I_CP *1
Limits
-50
-50
-6
-3
-6
Unit
V
V
V
A
A
 Inner circuit (Unit : mm)
(5)
(4)
Tr.1
Tr.2
(1) Tr.1 Base
(2) Emitter
(3) Tr.2 Base
(4) Tr.2 Collector
(1)
(2)
(3)
(5) Tr.1 Collector
　<Tr.2>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP *1
Limits
50
50
6
3
6
Unit
V
V
V
A
A
　<Tr.1 and Tr.2>
Parameter
Symbol Limits
Power dissipation
Junction temperature
Range of storage temperature
P_D ^*2
P_D ^*3
P_D ^*3
T_j
T_stg
0.5
1.25
0.9
150
-55 to 150
*1 Pw=10ms, Single Pulse
*2 Mounted on a recommended land.
*3 Mounted on a 25 x 25 x 0.8[mm] ceramic board.
Unit
W/Total
W/Total
W/Element
C
C
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2010.11 - Rev.A