HP8MA2 Datasheet, PDF (2/22 Pages) Rohm – 30V Nch+Pch Middle Power MOSFET

HP8MA2
　 　 　 　　 　
lThermal resistance
Parameter
Thermal resistance, junction - ambient
　 　 　 　 　 　 　 　 _Datasheet
　 　 　　　　　　　　　　　　　　　　
Symbol
R_thJA*4
Values
Unit
Min. Typ. Max.
-
- 41.7 ℃/W
lElectrical characteristics (T_a = 25°C)
Parameter
Symbol Type
Conditions
Values
Unit
Min. Typ. Max.
Drain - Source breakdown
voltage
V_(BR)DSS ^{Tr1 VGS = 0V, ID = 1mA}
Tr2 V_GS = 0V, I_D = -1mA
30 -
-30 -
Breakdown voltage
temperature coefficient
　^ΔV(BR)DSS　 Tr1 ^ID ^{= 1mA, referenced to 25℃} -
21
　_　 ^ΔT_{j 　} 　 _Tr2 I_D = -1mA, referenced to 25℃ _-
-22
-
V
-
-
mV/℃
-
Zero gate voltage
drain current
Gate - Source
leakage current
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
I_DSS ^{Tr1 VDS = 30V, VGS = 0V}
-
Tr2 V_DS = -30V, V_GS = 0V
-
I_GSS ^{Tr1 VDS = 0V, VGS = ±20V}
-
Tr2 V_DS = 0V, V_GS = ±20V
-
Tr1 V_DS = V_GS, I_D = 1mA
1.0
V_GS(th)
Tr2 V_DS = V_GS, I_D = -1mA -1.0
　^ΔV_GS(th) 　 Tr1 ^ID ^{= 1mA, referenced to 25℃}
-
　_　 ΔT_{j 　} 　 _Tr2 I_D = -1mA, referenced to 25℃ _-
-1
μA
- -1
- ±100
nA
- ±100
- 2.5
V
- -2.5
-3 -
mV/℃
2.9 -
Static drain - source
on - state resistance
Gate resistance
V_GS = 10V, I_D = 18A
Tr1
R_DS(on)*5
V_GS = 4.5V, I_D = 18A
V_GS = -10V, I_D = -15A
Tr2
V_GS = -4.5V, I_D = -15A
Tr1
R_G
f=1MHz, open drain
Tr2
- 7.5 9.6
- 11.7 16.5
mΩ
- 13.2 17.9
- 21.0 29.0
- 2.5 -
Ω
- 10 -
Forward Transfer
Admittance
|Y_fs|^{*5 Tr1 VDS = 5V, ID = 18A}
Tr2 V_DS = -5V, I_D = -15A
8.5 -
9.0 -
-
S
-
*1 Pw ≦ 1s, Limited only by maximum temperature allowed.
*2 Pw ≦ 10μs, Duty cycle ≦ 1%
*3 Tr1: L ⋍ 0.05mH, V_DD = 15V, R_G = 25Ω, Starting T_j = 25℃ Fig.3-1,3-2
Tr2: L ⋍ 0.05mH, V_DD = -15V, R_G = 25Ω, Starting T_j = 25℃ Fig.6-1,6-2
*4 Mounted on a Cu board (40×40×0.8mm)
*5 Pulsed
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　
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20160706 - Rev.002