EMX4_1 Datasheet, PDF (2/4 Pages) Rohm – High transition frequency (dual transistors)

Transistors
zElectrical characteristic curves
500
Ta=25°C
500
VCE=10V
200
200
100
100
50
50
EMX4 / UMX4N / IMX4
5.0
Ta=25°C
IC/IB=5
2.0
1.0
0.5
Ta=25°C
f=1MHz
IE=0A
Cob
Cre
20
10
0.1 0.2
0.5 1 2
5 10 20 50
COLLECTOR CURRENT : IC (mA)
Fig.1 DC current gain vs. collector current
20
10
0.1 0.2
0.5 1 2
5 10 20 50
COLLECTOR CURRENT : IC (mA)
Fig.2 Collector-emitter saturation voltage
vs. collector current
0.2
0.1
0.1 0.2
0.5 1 2
5 10 20 50
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.3 Capacitance vs. reverse bias voltage
5000
50
Ta=25°C
VCE=10V
2000
20
1000
10
500
5
200
100
−0.1 −0.2 −0.5 −1 −2
−5 −10 −20 −50
EMITTER CURRENT : IE (mA)
Fig.4 Gain bandwidth product vs. emitter current
2
1
0.1 0.2
0.5 1 2
Ta=25°C
VCE=10V
f=31.8MHz
5 10 20 50
COLLECTOR CURRENT : IC (mA)
Fig.5 Collector to base time constance
vs. collector current
Ta=25°C
25
VCE=10V
IC=10mA
20
15
10
5
0
0.1 0.2
0.5 1 2
5 10
FREQUENCY : f (GHz)
Fig.6 Insertion gain vs. frequency
25
Ta=25°C
VCE=12V
f=200MHz
20
15
10
5
0
0.5 1 2
5 10 20
50
COLLECTOR CURRENT : Ic (mA)
Fig.7 Insertion gain vs. collector current
30
Ta=25°C
IC=2mA
25
f=200MHz
20
15
10
5
0
02
4
6
8 10 12
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.8 Insertion gain vs. collector voltage
Ta=25°C
VCE=12V
f=200MHz
20
10
0
0.1 0.2
0.5 1 2
5 10 20 50
COLLECTOR CURRENT : IC (mA)
Fig.9 Noise factor vs. collector current
Rev.C
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