EMX4_1 Datasheet, PDF (1/4 Pages) Rohm – High transition frequency (dual transistors)

Transistors
EMX4 / UMX4N / IMX4
High transition frequency (dual transistors)
EMX4 / UMX4N / IMX4
zFeatures
1) Two 2SC3837K chips in a EMT or UMT or SMT package.
2) High transition frequency. (fT=1.5GHz)
3) Low output capacitance. (Cob=0.9pF)
zEquivalent circuits
EMX4 / UMX4N
(3) (2) (1)
IMX4
(4) (5) (6)
(4)
(5) (6)
(3)
(2) (1)
zDimensions (Unit : mm)
EMX4
ROHM : EMT6
UMX4N
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power ^{EMX4 / UMX4N}
dissipation
IMX4
Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Limits
30
20
3
50
150(TOTAL)
300(TOTAL)
150
−55 to +150
Unit
V
V
V
mA
∗1
mW
∗2
°C
°C
zPackage, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMX4
EMT6
X4
T2R
8000
UMX4N
UMT6
X4
TR
3000
IMX4
SMT6
X4
T108
3000
ROHM : UMT6
EIAJ : SC-88
IMX4
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
Each lead has same dimensions
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Collector-base time constant
Noise factor
∗Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
rbb' Cc
NF
Min.
Typ.
Max.
Unit
Conditions
30
−
−
V
IC=10µA
20
−
−
V
IC=1mA
3
−
−
V
IE=10µA
−
−
0.5
µA VCB=15V
−
−
0.5
µA VEB=2V
56
−
180
−
VCE/IC=10V/10mA
−
−
0.5
V
IC/IB=20mA/4mA
600
1500
−
MHz VCE/IE=10V/ −10mA, f=200MHz
∗
−
0.95
1.6
pF VCB/f=10V/1MHz, IE=0A
−
6
13
ps VCB=10V, IC=10mA , f=31.8MHz
−
4.5
−
dB VCE=12V, IC=2mA , f=200MHz , Rg=50Ω
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
Rev.C
1/3