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EMT3 Datasheet, PDF (2/3 Pages) Rohm – General purpose (dual transistors) | |||
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Transistors
zElectrical characteristics curves
â50
Ta=100ËC
â20
25ËC
â40ËC
â10
VCE= â6V
â5
â2
â1
â0.5
â0.2
â0.1
â0.2 â0.4 â0.6 â0.8 â1.0 â1.2 â1.4 â1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
EMT3 / IMT3A
â10
Ta=25ËC
â35.0
â31.5
â8
â28.0
â24.5
â6
â21.0
â17.5
â4
â14.0
â10.5
â2
â7.0
â3.5µA
IB=0
0
â0.4 â0.8 â1.2 â1.6 â2.0
COLLECTOR TO MITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics (I)
â100
Ta=25ËC
â500
â80 â450
â400
â350
â300
â60
â40
â20
â250
â200
â150
â100
â50µA
IB=0
0
â1
â2
â3
â4
â5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics (II)
500
Ta=25ËC
200
VCE= â5V
â3V
â1V
100
50
â0.2 â0.5 â1 â2 â5 â10 â20 â50 â100
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current (I)
500
Ta=100ËC
25ËC
200
â40ËC
100
50
â0.2 â0.5 â1 â2
VCE= â6V
â5 â10 â20 â50 â100
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current (II)
â1
Ta=25ËC
â0.5
â0.2
â0.1
â0.05
IC/IB=50
20
10
â0.2 â0.5 â1 â2 â5 â10 â20 â50 â100
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
â1
â0.5
lC/lB=10
1000
500
Ta=25ËC
VCE= â12V
â0.2
200
Ta=100ËC
â0.1
25ËC
â40ËC
100
â0.05
â0.2 â0.5 â1 â2 â5 â10 â20 â50 â100
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
50
0.5 1 2
5 10 20 50 100
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
20
Cib
10
Ta=25ËC
f=1MHz
IE=0A
IC=0A
Cob
5
2
â0.5 â1 â2
â5 â10 â20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
Rev.A
2/2
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