EMT3 Datasheet, PDF (1/3 Pages) Rohm – General purpose (dual transistors)

Transistors
EMT3 / IMT3A
General purpose (dual transistors)
EMT3 / IMT3A
zFeatures
1) Two 2SA1037AK chips in a EMT or SMT package.
zEquivalent circuits
EMT3
(3) (2) (1)
IMT3A
(4) (5) (6)
Tr2
Tr1 ^Tr2
Tr1
(4)
(5)
(6)
(3)
(2)
(1)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
EMT3
IMT3A
Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−60
−50
−6
−150
150(TOTAL)
300(TOTAL)
150
−55 to +150
Unit
V
V
V
mA
∗1
mW
∗2
°C
°C
zPackage, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMT3
EMT6
T3
T2R
8000
IMT3A
SMT6
T3
T108
3000
zExternal dimensions (Unit : mm)
EMT3
(4)
(3)
(5)
(2)
(6)
(1)
1.2
1.6
ROHM : EMT6
IMT3A
Each lead has same dimensions
1.6
2.8
0.3Min.
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
Typ.
Max.
Unit
Conditions
−60
−
−
V
IC=−50µA
−50
−
−
V
IC=−1mA
−6
−
−
V
IE=−50µA
−
−
−0.1
µA VCB=−60V
−
−
−0.1
µA VEB=−6V
−
−
−0.5
V
IC/IB=−50mA/−5mA
120
−
560
−
VCE=−6V, IC=−1mA
−
140
−
MHz VCE=−12V, IE=2mA, f=100MHz ∗
−
4
5
pF VCE=−12V, IE=0A, f=1MHz
Rev.A
1/2