EMT2T2R Datasheet, PDF (2/3 Pages) Rohm – General purpose (dual transistors)

Transistors
zElectrical characteristics curves
−50
Ta=100˚C
−20
25˚C
−40˚C
−10
VCE= −6V
−5
−2
−1
−0.5
−0.2
−0.1
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
EMT2 / UMT2N / IMT2A
−10
Ta=25˚C
−35.0
−31.5
−8
−28.0
−24.5
−6
−21.0
−17.5
−4
−14.0
−10.5
−2
−7.0
−3.5µA
IB=0
0
−0.4 −0.8 −1.2 −1.6 −2.0
COLLECTOR TO MITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics (I)
−100
Ta=25˚C
−500
−80 −450
−400
−350
−300
−60
−40
−20
−250
−200
−150
−100
−50µA
IB=0
0
−1
−2
−3
−4
−5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics (II)
500
Ta=25˚C
200
VCE= −5V
−3V
−1V
100
50
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current (I)
500
Ta=100˚C
25˚C
200
−40˚C
100
50
−0.2 −0.5 −1 −2
VCE= −6V
−5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current (II)
−1
Ta=25˚C
−0.5
−0.2
−0.1
−0.05
IC/IB=50
20
10
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
−1
−0.5
lC/lB=10
1000
500
Ta=25˚C
VCE= −12V
−0.2
200
Ta=100˚C
−0.1
25˚C
−40˚C
100
−0.05
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
50
0.5 1 2
5 10 20 50 100
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
20
Cib
10
Ta=25˚C
f=1MHz
IE=0A
IC=0A
Cob
5
2
−0.5 −1 −2
−5 −10 −20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
Rev.A
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