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EMT2T2R Datasheet, PDF (1/3 Pages) Rohm – General purpose (dual transistors) | |||
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Transistors
EMT2 / UMT2N / IMT2A
General purpose (dual transistors)
EMT2 / UMT2N / IMT2A
zFeatures
1) Two 2SA1037AK chips in a EMT or UMT or SMT package.
zEquivalent circuits
EMT2 / UMT2N
IMT2A
(3) (2)
(1)
(4) (5)
(6)
Tr1
Tr1
Tr2
Tr2
(4) (5) (6)
(3) (2) (1)
zExternal dimensions (Unit : mm)
EMT2
(4)
(3)
(5)
(2)
(6)
(1)
1.2
1.6
ROHM : EMT6
UMT2N
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
EMT2 / UMT2N
IMT2A
Junction temperature
Storage temperature
â1 120mW per element must not be exceeded.
â2 200mW per element must not be exceeded.
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
â60
â50
â6
â150
150(TOTAL)
300(TOTAL)
150
â55 to +150
Unit
V
V
V
mA
â1
mW
â2
°C
°C
zPackage, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMT2
EMT6
T2
T2R
8000
UMT2N
UMT6
T2
TR
3000
IMT2A
SMT6
T2
T108
3000
1.25
2.1
0.1Min.
ROHM : UMT6
EIAJ : SC-88
IMT2A
Each lead has same dimensions
1.6
2.8
0.3Min.
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
âTransition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
Typ.
Max.
Unit
Conditions
â60
â
â
V
IC=â50µA
â50
â
â
V
IC=â1mA
â6
â
â
V
IE=â50µA
â
â
â0.1
µA VCB=â60V
â
â
â0.1
µA VEB=â6V
â
â
â0.5
V
IC/IB=â50mA/â5mA
120
â
560
â
VCE=â6V, IC=â1mA
â
140
â
MHz VCE=â12V, IE=2mA, f=100MHz â
â
4
5
pF VCE=â12V, IE=0A, f=1MHz
Rev.A
1/2
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