EMT18_10 Datasheet, PDF (2/4 Pages) Rohm – General purpose transistors(dual transistors)

EMT18 / UMT18N / IMT18
Data Sheet
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE (sat)
hFE
fT
Cob
Min.
−15
−12
−6
−
−
−
270
−
−
Typ. Max.
−−
−−
−−
− −0.1
− −0.1
−100 −250
− 680
260 −
6.5 −
Unit
V
V
V
μA
μA
mV
−
MHz
pF
Conditions
IC= −10μA
IC= −1mA
IE= −10μA
VCB= −15V
VCB= −6V
IC / IB= −200mA / −10mA
VCE= −2V, IC= −10mA
VCE= −2V, IE=10mA, f=100MHz
VCB= −10V, IE=0A, f=1MHz
Packaging specifications and hFE
Type
EMT18
UMT18N
IMT18
Package name
Code
Basic ordering unit (pieces)
T2R
8000
−
−
Taping
TR
3000
−
−
T110
3000
−
−
Electrical characteristic curves
1000
500
VCE=2V
200 _{Ta=125∞C}
100
Ta=25∞C
Ta= −40∞C
50
20
10
5
2
1
0
0.5
1.0
1.5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded Emitter Propagation
Characteristics
1000
500
VCE=2V
200
100
Ta=125∞C
Ta=25∞C
50
Ta= −40∞C
20
10
5
2
1
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.2 DC Current Gain vs.
Collector Current
1000
500
IC / IB=20
200
100
Ta=125°C
50
Ta=25°C
Ta= −40°C
20
10
5
2
1
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.3 Collector-Emitter Saturation
Voltage vs.
Collector Current (Ι)
www.rohm.com
2/3
○^c 2010 ROHM Co., Ltd. All rights reserved.
2010.08 - Rev.C