EMT18_10 Datasheet, PDF (1/4 Pages) Rohm – General purpose transistors(dual transistors)

General purpose transistors(dual transistors)
EMT18 / UMT18N / IMT18
Features
1) Two 2SA2018 chips in a EMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
Structure
Epitaxial planar type
PNP silicon transistor
The following characteristics apply to both Tr1 and Tr2.
Inner circuit
EMT18 / UMT18N
(3) (2) (1)
IMT18
(4) (5) (6)
Tr1
Tr1
Tr2
Tr2
(4) (5) (6)
(3) (2) (1)
Dimensions (Unit : mm)
EMT18
ROHM : EMT6
UMT18N
Each lead has same dimensions
Abbreviated symbol : T18
ROHM : UMT6
EIAJ : SC-88
IMT18
Each lead has same dimensions
Abbreviated symbol : T18
ROHM : SMT6
EIAJ : SC-74
JEDEC : SOT-457
Each lead has same dimensions
Abbreviated symbol : T18
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
−15
V
Collector-emitter voltage
VCEO
−12
V
Emitter-base voltage
VEBO
−6
V
Collector current
IC
−500
mA
ICP
1.0 ∗1 A
Power dissipation
EMT6 _{150 (TOTAL)}∗2
PC UMT6
mW
SMT6 300 (TOTAL)^∗3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150 °C
∗1 Single pulse PW=1ms
∗2 120mW per element must not be exceeded.
∗3 200mW per element must not be exceeded.
www.rohm.com
1/3
○^c 2010 ROHM Co., Ltd. All rights reserved.
2010.08 - Rev.C