EMT18 Datasheet, PDF (2/4 Pages) Rohm – General purpose transistors (dual transistors)

Transistors
EMT18 / UMT18N / IMT18
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO −15 − − V IC= −10µA
Collector-emitter breakdown voltage BVCEO −12 − − V IC= −1mA
Emitter-base breakdown voltage
BVEBO −6 −
−
V IE= −10µA
Collector cutoff current
ICBO
−
− −0.1 µA VCB= −15V
Emitter cutoff current
IEBO
−
− −0.1 µA VCB= −6V
Collector-emitter saturation voltage VCE (sat) − −100 −250 mV IC / IB= −200mA / −10mA
DC current transfer ratio
hFE 270 − 680 − VCE= −2V, IC= −10mA
Transition frequency
fT
− 260 − MHz VCE= −2V, IE=10mA, f=100MHz
Output capacitance
Cob − 6.5 − pF VCB= −10V, IE=0A, f=1MHz
zPackaging specifications and hFE
Type
EMT18
UMT18N
IMT18
Package name
Code
Basic ordering unit (pieces)
T2R
8000
−
−
Taping
TR
3000
−
−
T110
3000
−
−
zElectrical characteristic curves
1000
500
VCE=2V
200 _Ta=125°C
100
Ta=25°C
Ta= −40°C
50
20
10
5
2
1
0
0.5
1.0
1.5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded Emitter Propagation
Characteristics
1000
500
VCE=2V
200
100
Ta=125°C
Ta=25°C
50
Ta= −40°C
20
10
5
2
1
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.2 DC Current Gain vs.
Collector Current
1000
500
IC / IB=20
200
100
Ta=125°C
50
Ta=25°C
Ta= −40°C
20
10
5
2
1
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.3 Collector-Emitter Saturation
Voltage vs.
Collector Current (Ι)
Rev.A
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