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EMT18 Datasheet, PDF (1/4 Pages) Rohm – General purpose transistors (dual transistors)
Transistors
EMT18 / UMT18N / IMT18
General purpose transistors
(dual transistors)
EMT18 / UMT18N / IMT18
zFeatures
1) Two 2SA2018 chips in a EMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
zStructure
Epitaxial planar type
NPN silicon transistor
The following characteristics apply to both Tr1 and Tr2.
zEquivalent circuit
EMT18 / UMT18N
(3) (2) (1)
IMT18
(4) (5) (6)
Tr1
Tr1
Tr2
Tr2
(4) (5) (6)
(3) (2) (1)
zExternal dimensions (Unit : mm)
EMT18
ROHM : EMT6
(4)
(3)
(5)
(2)
(6)
(1)
1.2
1.6
Each lead has same dimensions
Abbreviated symbol : T18
UMT18N
1.25
2.1
ROHM : UMT6
EIAJ : SC-88
0.1Min.
Each lead has same dimensions
Abbreviated symbol : T18
IMT18
1.6
2.8
0.3Min.
ROHM : SMT6
EIAJ : SC-74
JEDEC : SOT-457
Each lead has same dimensions
Abbreviated symbol : T18
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
−15
V
Collector-emitter voltage
VCEO
−12
V
Emitter-base voltage
VEBO
−6
V
Collector current
IC
−500
mA
ICP
1.0 ∗1 A
Power dissipation
EMT6 150 (TOTAL)∗2
PC UMT6
mW
SMT6 300 (TOTAL)∗3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150 °C
∗1 Single pulse PW=1ms
∗2 120mW per element must not be exceeded.
∗3 200mW per element must not be exceeded.
Rev.A
1/3