EM6K7 Datasheet, PDF (2/5 Pages) Rohm – 1.2V Drive Nch+Nch MOSFET

EM6K7
zElectrical characteristics (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2>
Parameter
Symbol Min.
Gate-source leakage
IGSS
−
Drain-source breakdown voltage V(BR)DSS 20
Zero gate voltage drain current IDSS
−
Gate threshold voltage
VGS(th)
0.3
−
Typ.
−
−
−
−
0.8
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
RDS(on^∗)
−
−
1.0
1.2
−
1.6
|Yfs| ^∗ 200
−
Ciss
−
25
Coss
−
10
Crss
−
10
td(on) ^∗
−
5
tr ∗ −
10
td(off) ∗
−
15
tf ^∗ −
10
∗ Pulsed
Max.
±10
−
1
1.0
1.2
1.4
2.4
4.8
−
−
−
−
−
−
−
−
Unit
Conditions
µA VGS=±8V, VDS=0V
V ID=1mA, VGS=0V
µA VDS=20V, VGS=0V
V VDS=10V, ID=1mA
Ω ID=200mA, VGS=2.5V
Ω ID=200mA, VGS=1.8V
Ω ID=40mA, VGS=1.5V
Ω ID=20mA, VGS=1.2V
mS VDS=10V, ID=200mA
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns VDD 10V, ID=150mA
ns VGS=4.0V
ns RL 67Ω
ns RG=10Ω
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
VSD ^∗
−
− 1.2 V
∗ Pulsed
Conditions
IS= 100mA, VGS=0V
Data Sheet
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2009.07 - Rev.A