EM6K7 Datasheet, PDF (1/5 Pages) Rohm – 1.2V Drive Nch+Nch MOSFET

1.2V Drive Nch+Nch MOSFET
EM6K7
zStructure
Silicon N-channel
MOSFET
zApplications
Switching
zDimensions (Unit : mm)
EMT6
zFeatures
1) The MOSFET elements are independent,
eliminating mutual interference.
2) Mounting cost and area can be cut in half.
3) Low voltage drive (1.2V) makes this device ideal for
portable equipment.
zPackaging specifications
Package
Taping
Type
Code
Basic ordering unit
(pieces)
T2R
8000
EM6K7
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2>
Each lead has same dimensions
Abbreviated symbol : K07
zInner circuit
(6)
(5)
(4)
∗1
∗2
∗1
(1)
(2)
∗1 Esd Protection diode
∗2 Body Diode
∗2
(1)Tr1 Source
(2)Tr1 Gate
(3)Tr2 Drain
(4)Tr2 Source
(3)
(5)Tr2 Gate
(6)Tr1 Drain
Parameter
Drain−source voltage
Gate−source voltage
Drain current
Continuous
Pulsed
Total power dissipation
Symbol
VDSS
VGSS
ID
IDP ^∗1
PD^∗2
Channel temperature
Tch
Range of storage temperature
Tstg
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land.
Limits
20
±8
±200
±400
150
120
150
−55 to +150
Unit
V
V
mA
mA
mW / TOTAL
mW / ELEMENT
°C
°C
zThermal resistance
Parameter
Channel to ambient
∗ Each terminal mounted on a recommended land
Symbol
Rth(ch-a) ^∗
Limits
833
1042
Unit
°C/W / TOTAL
°C/W / ELEMENT
www.rohm.com
1/4
○^c 2009 ROHM Co., Ltd. All rights reserved.
2009.07 - Rev.A