DAP202U Datasheet, PDF (2/3 Pages) ON Semiconductor – Common Anode Silicon Dual Switching Diodes

Diodes
DAP202U
zElectrical characteristic curves (Ta=25°C)
100
Ta=75℃
100000
Ta=125℃
10000
10
Ta=150℃
1
Ta=25℃
Ta=-25℃
1000
100
10
1
Ta=150℃ _Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.1
0
100 200 300 400 500 600 700 800 900 1000
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.1
0
10 20 30 40 50 60 70
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
10
1
0.1
0
f=1MHz
5
10
15
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
900
100
10
Ta=25℃
90
IF=100mA
Ta=25℃
9
VR=70V
890
n=30pcs
80
n=10pcs
8
70
7
880
60
6
50
5
870
40
4
30
3
860
AVE:877.0mV
850
20
2
10
1
AVE:17.93nA
0
0
Ta=25℃
VR=6V
f=1MHz
n=10pcs
AVE:1.840pF
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
20
10
9
Ifsm
1cyc
8
15
8.3ms
7
6
5
Ta=25℃
VR=6V
IF=5mA
4
RL=50Ω
n=10pcs
3
Ifsm
8.3ms 8.3ms
1cyc
10
5
4
2
AVE:2.50A
3
5
2
1
0
IFSM DISRESION MAP
1
AVE:1.93ns
0
trr DISPERSION MAP
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
1000
10
Rth(j-a)
9
Ifsm
t
8
100
7
Rth(j-c)
6
10
Mounted on epoxy board
5
IM=10mA
IF=100mA
4
10
3
1ms ^time
2
300us
1
1
1
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
0
TIME:t(ms)
TIME:t(s)
IFSM-t CHARACTERISTICS
Rth-t CHARACTERISTICS
AVE:1.32kV
AVE:5.47kV
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
Rev.A
2/2