DAP202U Datasheet, PDF (1/3 Pages) ON Semiconductor – Common Anode Silicon Dual Switching Diodes

Diodes
DAP202U
Switching diode
DAP202U
zApplication
Ultra high speed switching
zFeatures
1) Small mold type. (UMD3)
2) High reliability.
zConstruction
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
2.0±0.2
0.3±0.1
各_Eリ_a同cー_h寸lド_e法aと_{d h}も_{as same dimension}
(3)
0.15±0.05
(2)
(1)
0～0.1
（0.65） （0.65）
1.3±0.1
0.7±0.1
0.9±0.1
ROHM :
JEDEC :S0T-323
JEITA : SC-70
week code (year week factory)
zTaping specification (Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
zLand size figure (Unit : mm)
1.3
0.65
0.8MIN
UMD３
zCircuits
0.3±0.1
2.25±0.1
　　　　 0
4.0±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
V_RM
Reverse voltage (DC)
V_R
Forward current（Single）
I_FM
Average rectified forward current (Single) Io
Surge current （t=1us）（Single）
Power dissipation
I_surge
Pd
Junction temperature
Tj
Storage temperature
Tstg
Rated in slash put frequency
f
Limits
80
80
300
100
4
200
150
-55 to +150
100
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F
-
-
1.2
Reverse current
I_R
-
-
0.1
Capacitance between terminals
Ct
-
-
3.5
Reverse recovery time
trr
-
-
4
Unit
V
V
mA
mA
A
mW
℃
℃
MHz
Unit
V
µA
pF
ns
φ0.5±0.05
Conditions
I_F=100mA
V_R=70V
V_R=6V , f=1MHz
V_R=6V , IF=5mA , RL=50Ω
1.25±0.1
Rev.A
1/2