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DAN222TL Datasheet, PDF (2/3 Pages) Rohm – Band Switching Diode
DAN222
Data Sheet
100
Ta=75℃
10000
Ta=125℃
10
Ta=150℃
1
Ta=25℃
1000
100
10
Ta=25℃
1
Ta=150℃ Ta=125℃
Ta=75℃
Ta=25℃
Ta=25℃
0.1
0.1
0
100 200 300 400 500 600 700 800 900 1000
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
0.01
0
10 20 30 40 50 60 70 80
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
10
1
0.1
0
950
100
Ta=25℃
90
IF=100mA
940
n=30pcs
80
70
930
60
50
920
40
30
910
20
10
AVE:921.7mV
900
0
VF DISPERSION MAP
10
Ta=25℃
9
VR=80V
n=10pcs
8
7
6
5
4
AVE:9.655nA
3
2
1
0
IR DISPERSION MAP
f=1MHz
5
10
15
20
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
Ta=25℃
VR=6V
f=1MHz
n=10pcs
AVE:1.17pF
Ct DISPERSION MAP
20
15
10
5
0
100
10
1
0.1
10
Ifsm
1cyc
9
8
8.3ms
7
6
5
4
3
2
1
AVE:3.50A
0
IFSM DISRESION MAP
Ta=25℃
VR=6V
IF=5mA
RL=50Ω
n=10pcs
AVE:1.93ns
trr DISPERSION MAP
5
Ifsm
4
8.3ms 8.3ms
3
1cyc
2
1
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Ifsm
t
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
10
Rth(j-a)
9
8
7
100
Rth(j-c)
6
Mounted on epoxy board
5
IM=1mA
IF=10mA
4
10
3
1ms time
2
300us
1
1
0
100
0.001 0.01 0.1
1
10 100 1000
TIME:t(s)
Rth-t CHARACTERISTICS
AVE:0.97kV
AVE:2.54kV
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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2011.06 - Rev.B