DAN222TL Datasheet, PDF (1/3 Pages) Rohm – Band Switching Diode

Data Sheet
Band Switching Diode
DAN222
Applications
Ultra high speed switching
Features
1) Ultra small mold type. (EMD3)
2) High reliability.
Construction
Silicon epitaxial planar
Dimensions (Unit : mm)
Land size figure (Unit : mm)
1.6±0.2
0.3±0.1
　　　 0.05
(3)
0.2±0.1
(2)
(1)
　　-0.05
0.5 0.5
1.0± 0.1
0.15±0.05
1.0
0.5 0.5
0.7
0～ 0 .1
0.55±0.1
0.7± 0.1
EMD3 ^0.6
0.6
Structure
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory)
Taping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φφ1.15.55±00..1
　　　　　00
0.3±0.1
1.8±0 .1
φ0 .5±0.1
0.9±0.2
Absolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Forward current (single)
Average rectified forward voltage (single)
Surge current （t=1us）
Power dissipation
Junction temperature
Storage temperature
Rated in slash put frequency
Symbol
V_RM
V_R
I_FM
Io
I_surge
Pd
Tj
Tstg
f
Limits
80
80
300
100
4
150
150
55 to 150
100
Unit
V
V
mA
mA
A
mW
°C
°C
MHz
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F
-
-
1.2
Reverse current
I_R
-
-
0.1
Capacitance between terminals
Ct
-
-
3.5
Reverse recovery time
trr
-
-
4
Unit
Conditions
V
I_F=100mA
μA
V_R=70V
pF
V_R=6V , f=1MHz
ns
V_R=6V , IF=5mA , RL=50Ω
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2011.06 - Rev.B