BU4S11 Datasheet, PDF (2/4 Pages) Rohm – Single 2-input NAND gate

Standard ICs
•^{Electrical characteristics}
DC characteristics (unless otherwise noted, VSS = 0V, Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
3.5
—
—
V
7.0
—
—
V
Input high level voltage
VIH
11.0
—
—
V
—
—
1.5
V
—
—
3.0
V
Input low level voltage
VIL
—
—
4.0
V
Input high level current
IIH
—
—
0.3
µA
Input low level current
IIL
—
— – 0.3
µA
4.95
—
—
V
Output high level voltage VOH 9.95
—
—
V
14.95 —
—
V
—
—
0.05
V
Output low level voltage VOL
—
—
0.05
V
—
—
0.05
V
– 0.51
—
—
mA
– 2.1
—
—
mA
Output high level current IOH – 1.3
—
—
mA
– 3.4
—
—
mA
0.51
—
Output low level current IOL
1.3
—
3.4
—
—
mA
—
mA
—
mA
—
—
0.25
µA
Static current dissipation
IDD
—
—
0.5
µA
—
—
1.0
µA
VDD (V)
5
10
15
5
10
15
15
15
5
10
15
5
10
15
5
5
10
15
5
10
15
5
10
15
Conditions
VOUT = 0.5V
VOUT = 1.0V
VOUT = 1.5V
| IOUT | < 1µA
VOUT = 4.5V
VOUT = 9.0V
VOUT = 13.5V
| IOUT | < 1µA
VIH = 15V
VIL = 0V
| IOUT | < 1µA
VIN = VSS
| IOUT | < 1µA
VIN = VDD
VOH = 4.6V
VOH = 2.5V
VOH = 9.5V
VOH = 13.5V
VIN = VSS
VOL = 0.4V
VOL = 0.5V
VOL = 1.5V
VIN = VDD
VIN = VSS, VDD
BS4S11
Measurement
circuit
Fig.1
2