BU4S11 Datasheet, PDF (1/4 Pages) Rohm – Single 2-input NAND gate

Standard ICs
Single 2-input NAND gate
BU4S11
The BU4S11 is a dual-input positive logic NAND gate. This is an ultra-compact logic IC with one circuit of the
BU4011B built into an SMP package.
•^Features
1) Low current dissipation.
2) Super-mini mold package designed for surface
mounting.
3) Wide range of operating power supply voltage.
4) Capable of driving two L-TTL inputs and one LS-TTL
input directly
•^{Block diagram}
VDD
Y
5
4
1
2
3
A
B
VSS
•^{Absolute maximum ratings (Ta = 25°C)}
Parameter
Symbol
Limits
Unit
Power supply voltage
Power dissipation
Input current
Operating temperature
Storage temperature
Input voltage
VDD
VSS – 0.3 ~ VSS + 18
V
Pd
170
mW
IIN
± 10
mA
Topr
– 40 ~ + 85
°C
Tstg
– 55 ~ + 150
°C
VIN
VSS – 0.3 ~ VDD + 0.3
V
Note 1: These values indicate the range limits of the voltage that can be applied to each pin without
destroying it. Operation cannot be guaranteed at these values.
Note 2: Power dissipation is reduced by 1.7mW for each increase in Ta of 1°C each 25°C.
•^{Recommended operating conditions (Ta = 25°C, VSS = 0 V)}
Parameter
Symbol Min. Typ. Max.
Unit
Power supply voltage
VDD
3
—
16
V
Input voltage
VIN
0
—
VDD
V
1