BR25S320-W_12 Datasheet, PDF (2/35 Pages) Rohm – SPI BUS EEPROM

BR25Sxxx-W Series (32K 64K 128K 256K)
Datasheet
●Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Ratings
Supply Voltage
V_CC
-0.3 to +6.5
450 (SOP8)
450 (SOP-J8)
300 (SSOP-B8)
Power Dissipation
Pd
330 (TSSOP-B8)
310 (TSSOP-B8J)
310 (MSOP8)
300 (VSON008X2030)
Storage Temperature
Tstg
－65 to +125
Operating Temperature Topr
－40 to +85
Terminal Voltage
‐
-0.3 to Vcc+0.3
Unit
V
mW
℃
℃
V
Remarks
When using at Ta=25℃ or higher 4.5mW to be reduced per 1℃.
When using at Ta=25℃ or higher 4.5mW to be reduced per 1℃.
When using at Ta=25℃ or higher 3.0mW to be reduced per 1℃.
When using at Ta=25℃ or higher 3.3mW to be reduced per 1℃.
When using at Ta=25℃ or higher 3.1mW to be reduced per 1℃.
When using at Ta=25℃ or higher 3.1mW to be reduced per 1℃.
When using at Ta=25℃ or higher 3.0mW to be reduced per 1℃.
●Memory cell characteristics (Ta=25°C , Vcc=1.7V to 5.5V)
Parameter
Limits
Min.
Typ.
Number of data rewrite times *1
1,000,000
-
Data hold years *1
40
-
*1 Not 100% TESTED
Max.
-
-
Unit
Times
Years
●Recommended Operating Ratings
Parameter
Symbol
Ratings
Unit
Power source voltage
Vcc
1.7 to 5.5
V
Input voltage
V_IN
0 to Vcc
●Input / output capacity (Ta=25°C, frequency=5MHz)
Parameter
Symbol
Min.
Input capacity *1
C_IN
－
Output capacity *1
C_OUT
－
*1 Not 100% TESTED.
Max.
8
8
Unit
pF ^VIN=GND
V_OUT=GND
Conditions
●Electrical characteristics (Unless otherwise specified, Ta=-40°C to +85°C, Vcc=1.7V to 5.5V)
Parameter
Symbol _Min.
Limits
Typ.
Max. ^Unit
Conditions
“H” Input Voltage1
VIH1 0.7xVcc － Vcc+0.3 V 1.7≦Vcc≦5.5V
“L” Input Voltage1
VIL1
-0.3
－ 0.3xVcc V 1.7≦Vcc≦5.5V
“L” Output Voltage1
VOL1
0
－
0.4
V IOL=2.1mA, 2.5≦Vcc<5.5V
“L” Output Voltage2
VOL2
0
－
0.2
V IOL=1.0mA, 1.7≦Vcc<2.5V
“H” Output Voltage1
VOH1 Vcc-0.2 －
Vcc V IOH=-0.4mA, 2.5V≦Vcc<5.5V
“H” Output Voltage2
VOH2 Vcc-0.2 －
Vcc V IOH=-100µA, 1.7≦Vcc<2.5V
Input Leakage Current
ILI
-1
－
1
μA V_IN=0 to Vcc
Output Leakage Current
ILO
-1
－
1
μA V_OUT=0 to Vcc, CSB=Vcc
ICC1
－
－
0.5 ^*1
1 ^*2
mA
Vcc=1.8V, fSCK=5MHz, tE/W=5ms
Byte Write, Page Write, Write Status register
Operating Current Write
ICC2
－
－
1 ^*1
1.5 ^*2
mA
Vcc=2.5V, fSCK=10MHz, tE/W=5ms
Byte Write, Page Write, Write Status register
ICC3
－
－
2
3
*1
*2 mA
Vcc=5.5V, fSCK=20MHz, tE/W=5ms
Byte Write, Page Write, Write Status register
ICC4
－
－
1
mA
Vcc=1.8V, fSCK=5MHz, SO=OPEN
Read, Read Status Register
ICC5
－
－
1
mA
Vcc=2.5V, fSCK=2MHz, SO=OPEN
Read, Read Status Register
ICC6
－
－
1.5
mA
Vcc=2.5V, fSCK=5MHz, SO=OPEN
Read, Read Status Register
Operating Current Read
ICC7
－
－
2
mA
Vcc=2.5V, fSCK=10MHz, SO=OPEN
Read, Read Status Register
ICC8
－
－
2
mA
Vcc=5.5V, fSCK=5MHz, SO=OPEN
Read, Read Status Register
ICC9
－
－
4
mA
Vcc=5.5V, fSCK=10MHz, SO=OPEN
Read, Read Status Register
ICC10 －
－
8
mA
Vcc=5.5V, fSCK=20MHz, SO=OPEN
Read, Read Status Register
Standby Current
ISB
－
－
Vcc=5.5V, SO=OPEN
2
μA _{CSB=HOLDB=WP=Vcc, SCK=SI=Vcc or GND}
*1 BR25S320/640-W
*2 BR25S128/256-W
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TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001