BR25S320-W_12 Datasheet, PDF (1/35 Pages) Rohm – SPI BUS EEPROM

Datasheet
Serial EEPROM Series Standard EEPROM
SPI BUS EEPROM
BR25Sxxx-W Series
(32K 64K 128K 256K)
●General Description
BR25Sxxx-W series is a serial EEPROM of SPI BUS interface method
●Features
„ High speed clock action up to 20MHz (Max.)
„ Wait function by HOLDB terminal
„ Part or whole of memory arrays settable as read only
memory area by program
„ 1.7V to 5.5V single power source action most suitable
for battery use
„ Page write mode useful for initial value write at
factory shipment
„ Highly reliable connection by Au pad and Au wire
„ For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1)
„ Auto erase and auto end function at data rewrite
„ Low current consumption
¾ At write action (5V) : 1.5mA (Typ.)
¾ At read action (5V) : 1.0mA (Typ.)
¾ At standby action (5V) : 0.1μA (Typ.)
„ Address auto increment function at read action
„ Write mistake prevention function
¾ Write prohibition at power on
¾ Write prohibition by command code (WRDI)
¾ Write prohibition by WP pin
¾ Write prohibition block setting by status registers
(BP1, BP0)
¾ Write mistake prevention function at low voltage
„ Data kept for 40 years
„ Data rewrite up to 1,000,000 times
„ Data at shipment
Memory array: FFh
Status register: WPEN, BP1, BP0 : 0
●Packages W(Typ.) x D(Typ.) x H(Max.)
SOP8
5.00mm x 6.20mm x 1.71mm
TSSOP-B8
3.00mm x 6.40mm x 1.20mm
SOP- J8
4.90mm x 6.00mm x 1.65mm
TSSOP-B8J
3.00mm x 4.90mm x 1.10mm
SSOP-B8
3.00mm x 6.40mm x 1.35mm
MSOP8
2.90mm x 4.00mm x 0.90mm
VSON008X2030
2.00mm x 3.00mm x 0.60mm
●Page write
Page
Part Number
32Byte
BR25S320-W
BR25S640-W
64Byte
BR25S128-W
BR25S256-W
●BR25Sxxx-W Series
Capacity
Bit format
Power source
voltage
32Kbit 4K×8 1.7V to 5.5V
64Kbit 8K×8 1.7V to 5.5V
128Kbit 16K×8 1.7V to 5.5V
256Kbit 32K×8 1.7V to 5.5V
SOP8
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SOP-J8
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SSOP-B8 TSSOP-B8 MSOP8 TSSOP-B8J
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VSON008
X2030
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○Product structure：Silicon monolithic integrated circuit
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111ï½¥14ï½¥001
○This product is not designed protection against radioactive rays
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TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001