BC857B_11 Datasheet, PDF (2/3 Pages) Rohm – PNP small signal transistor

BC857B
Electrical characteristics curves
-100
V_CE=-5V
-10 _Ta=125ºC
75ºC
25ºC
-55ºC
-1
-0.1
0 -0.2 -0.4 -0.6 -0.8 -1 -1.2
BASE TO EMITTER VOLTAGE : V_BE (V)
Fig 1. Grounded Emitter Propagation
Characteristics
1000
Ta=25ºC
100
V_CE=-5V
-3V
-1V
Data Sheet
-120
-100
I_B=-500uA
-450uA
-400uA
-350uA
-300uA
-80
-60
-40
I_B=-250uA
I_B=-200uA
I_B=-150uA
I_B=-100uA
-20
I_B=-50uA
I_B=0A
Ta=25ºC
0
0
-2
-4
-6
-8
-10
COLLECTOR TO EMITTER VOLTAGE : V_CE (V)
Fig 2. Grounded Emitter Output
Characteristics (I)
1000
V_CE=-5V
-15
Ta=25ºC
-10
-5
I_B=-50uA
I_B=-45uA
I_B=-40uA
I_B=-35uA
I_B=-30uA
I_B=-25uA
I_B=-20uA
I_B=-15uA
I_B=-10uA
I_B=-5uA
0
I_B=0A
0
-0.4 -0.8 -1.2 -1.6
-2
COLLECTOR TO EMITTER VOLTAGE : V_CE (V)
Fig 3. Grounded Emitter Output
Characteristics (II)
-1
Ta=25ºC
100 ^Ta=125ºC
75ºC
25ºC
-55ºC
I_C/I_B=50/1
20/1
10/1
-0.1
10
-0.1
-1
-10
-100
COLLECTOR CURRENT : I_C (mA)
Fig 4. DC Current Gain vs.
Collector Current (I)
-1
I_C/I_B=20/1
Ta=125ºC
75ºC
25ºC
-0.1
-55ºC
-0.01
-0.1
-1
-10
-100
COLLECTOR CURRENT : I_C (mA)
Fig 7. Collector Saturation Voltage
vs. Collector Current (II)
10
-0.1
-1
-10
-100
COLLECTOR CURRENT : I_C (mA)
Fig 5. DC Current Gain vs.
Collector Current (II)
1000
500
Ta=25°C
VCE= −12V
200
100
50
0.5 1 2
5 10 20 50 100
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
-0.01
-0.1
-1
-10
-100
COLLECTOR CURRENT : I_C (mA)
Fig 6. Collector Saturation Voltage
vs. Collector Current (I)
20
Cib
10
Ta=25°C
f=1MHz
IE=0A
IC=0A
Cob
5
2
−0.5 −1 −2
−5 −10 −20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
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2011.11 - Rev.B