BC857B_11 Datasheet, PDF (1/3 Pages) Rohm – PNP small signal transistor

PNP small signal transistor
BC857B
Features
1) Ideal for switching and AF amplifier applications.
2) High current gain.
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
BC857B
Taping
T116
3000
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
∗ Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE
Limits
−50
−45
−5
−0.1
0.20
0.35
150
−65 to 150
Unit
V
V
V
A
W
W_∗
°C
°C
Dimensions (Unit : mm)
BC857B
2.9
0.4
(3)
0.95
0.45
(1)Emitter
(2)Base
(3)Collector
(2)
(1)
0.95 0.95
1.9
0.15
Each lead has same dimensions
Abbreviated symbol : G3F
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Collector-emitter breakdown voltage BVCEO −45
Collector-base breakdown voltage BVCBO −50
Emitter-base breakdown voltage
BVEBO
−5
Collector-base cutoff current
ICBO
−
VCE(sat1)
−
Collector-emitter saturation voltage
VCE(sat2)
−
Base-emitter voltage
DC current transfer ratio
Transition frequency
Collector outpu capacitance
VBE(on)
hFE
fT
Cob
−0.6
210
−
−
Collector-base cutoff current
ICBO
−
Typ. Max. Unit
−
−
V
−
−
V
−
−
V
− −0.015 μA
− −0.3 V
− −0.65 V
− −0.75 V
− 480 −
250 − MHz
−
4.5 pF
−
−4 μA
Conditions
IC= −1mA
IC= −50μA
IE= −50μA
VCB= −30V
IC/IB= −10mA/ −0.5mA
IC/IB= −100mA/ −5mA
VCE= −5V, IC= −10mA
VCE= 5V, IC= −2mA
VCE= −5V, IE= 20mA, f=100MHz
VCB= −10V, f=1MHz
VCB= −30V
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2011.11 - Rev.B