2SD1766 Datasheet, PDF (2/4 Pages) Rohm – Medium Power Transistor (32V, 2A)

Transistors
2SD1766 / 2SD1758 / 2SD1862
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO 40
−
−
V IC=50µA
Collector-emitter breakdown voltage ^{BVCEO 32}
−
−
V IC=1mA
Emitter-base breakdown voltage
BVEBO
5
−
−
V IE=50µA
Collector cutoff current
ICBO
−
−
1
µA VCB=20V
Emitter cutoff current
IEBO
−
−
1
µA VEB=4V
DC current ^{2SD1766,2SD1758,}
hFE
82
− 390
− VCE=3V, IC=0.5A
∗
transfer ratio _2SD1862
120 − 390
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
−
fT
−
0.5 0.8 V IC/IB=2A/0.2A
∗
100
− MHz VCE=5V, IE= −500mA, f=100MHz ∗
Output capacitance
∗ Measured using pulse current.
Cob
−
30
−
pF VCB=10V, IE=0A, f=1MHz
zPackaging specifications and hFE
Type
2SD1766
2SD1758
2SD1862
Package
Code
hFE
Basic ordering
unit (pieces)
PQR
PQR
QR
T100
1000
−
−
Taping
TL
2500
−
−
TV2
2500
−
−
hFE values are classified as follows :
Item
P
Q
R
hFE
82 to 180 120 to 270 180 to 390
zElectrical characteristic curves
2000
1000
500
Ta=25°C
VCE=3V
200
100
50
20
10
5
2
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
0.5
Ta=25°C
3.0mA
0.4
0.3
0.2
2.7mA
2.4mA
2.1mA
1.8mA
1.5mA
1.2mA
0.9mA
0.6mA
0.1
0.3mA
0
IB=0A
0
0.4
0.8
1.2 1.6
2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Ta=25°C
500
200
VCE=3V
100
1V
50
20
5 10 20 50 100 200 500 1A 2A
COLLECTOR CURRENT : IC (mA)
Fig.2 Grounded emitter output
characteristics
Fig.3 DC current gain vs. collector
current
Rev.A
2/3