2SD1766 Datasheet, PDF (1/4 Pages) Rohm – Medium Power Transistor (32V, 2A)

Transistors
2SD1766 / 2SD1758 / 2SD1862
Medium Power Transistor (32V, 2A)
2SD1766 / 2SD1758 / 2SD1862
zFeatures
1) Low VCE(sat).
VCE(sat) = 0.5V(Typ.)
（IC / IB = 2A / 0.2A）
2) Complements the 2SB1188 / 2SB1182 /
2SB1240.
zStructure
Epitaxial planar type
NPN silicon transistor
zExternal dimensions (Unit : mm)
2SD1766
4.5^{+−00..21}
1.6±0.1
1.5 _{−+00..12}
2SD1758
6.5±0.2
5.1^{+−00..21}
C0.5
2.3^{+−00..21}
0.5±0.1
(1) (2) (3)
0.4 _{−+00..015}
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
∗ Abbreviated symbol : DB
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
2SD1862
6.8±0.2
2.5±0.2
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
0.55 ±0.1
1.0±0.2
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
1.05
0.45±0.1
ROHM : ATV
∗ Denotes hFE
(1) Emitter
(2) Collector
(3) Base
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
32
V
Emitter-base voltage
VEBO
5
V
Collector current
Collector
power
dissipation
2SD1766
2SD1758
2SD1862
Junction temperature
IC
2
A (DC)
ICP
2.5
A (Pulse) ∗1
0.5
2 _∗2
W
PC
1
W
10
W (Tc=25°C)
1 ∗3
W
Tj
150
°C
Storage temperature
Tstg −55 to +150
°C
∗1 Single pulse, Pw=20ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.
∗3 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm² or lager.
Rev.A
1/3