2SCR552P_09 Datasheet, PDF (2/5 Pages) Rohm – Midium Power Transistors (30V / 3A)

2SCR552P
Electrical characteristic (Ta = 25C)
Parameter
Symbol Min.
Collector-emitter breakdown voltage
BV_CEO
30
Collector-base breakdown voltage
BV_CBO
30
Emitter-base breakdown voltage
BV_EBO
6
Collector cut-off current
I_CBO
-
Emitter cut-off current
Collector-emitter staturation voltage
I_EBO
-
V_CE(sa^*_t)1
-
DC current gain
Transition frequency
h_FE
200
f_T ^*1
-
Collector output capacitance
Turn-on time
Storage time
Fall time
*1 Pulsed
*2 See switching time test circuit
C_ob
-
t_{on *}2
-
t_{stg *}2
-
t_f *2
-
Data Sheet
Typ.
-
-
-
-
-
200
-
280
15
25
300
20
Max.
-
-
-
1
1
400
500
-
-
-
-
-
Unit
Conditions
V I_C= 1ｍA
V I_C= 100μA
V I_E= 100μA
A VCB= 30V
A VEB= 4V
mV I_C= 1A, I_B= 50mA
- V_CE= 2V, I_C= 500mA
MHz
V_CE= 10V
I_E=-100mA, f=100MHz
pF
V_CB= 10V, I_E=0A
f=1MHｚ
ns
ns
I_C= 1.5A,I_B1= 150mA,
I_B2=-150mA,V_CC ~_10V
ns
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2009.12 - Rev.A