2SCR552P_09 Datasheet, PDF (1/5 Pages) Rohm – Midium Power Transistors (30V / 3A)

Midium Power Transistors (30V / 3A)
2SCR552P
 Structure
NPN Silicon epitaxial planar transistor
 Features
1) Low saturation voltage, typically
V_{CE (sat)} = 0.4V (Max.) (I_C / I_B= 1A / 50mA)
2) High speed switching
 Applications
Driver
 Packaging specifications
Package
Type Code
Taping
T100
Basic ordering unit (pieces) 1000
2SCR552P

 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current ^DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
V_CBO
30
V
V_CEO
30
V
V_EBO
6
V
I_C
3
A
I_CP ^*1
6
A
P_D ^*2
0.5
W
P_D ^*3
2
W
T_j
150
C
T_stg -55 to 150
C
*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a recommended land.
*3 Mounted on a ceramic board. (40x40x0.7mm³)
 Dimensions (Unit : mm)
(1)
(2) (3)
Abbreviated symbol : NF
 Inner circuit (Unit : mm)
(2)
(1)
(1) Base
(2) Collector
(3) Emitter
(3)
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2009.12 - Rev.A