2SC5876_1 Datasheet, PDF (2/4 Pages) Rohm – Medium power transistor (60V, 0.5A)

Transistor
2SC5876
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector−base breakdown voltage BVCBO 60
Collector−emitter breakdown voltage BVCEO 60
Emitter−base breakdown voltage BVEBO 6
Collector cut-off current
Emitter cut-off current
ICBO
−
IEBO
−
Collector−emitter staturation voltage VCE(sat) −
DC current gain
Transition frequency
hFE
120
fT
−
Collector output capacitance
Turn-on time
Cob
−
ton
−
Storage time
tstg
−
Fall time
tf
−
Typ.
−
−
−
−
−
150
−
300
5
70
130
80
Max.
−
−
−
1.0
1.0
300
390
−
−
−
−
−
Unit
Conditions
V IC=100µA
V IC=1mA
V IE=100µA
µA VCB=40V
µA VEB=4V
mV IC=100mA, IB=10mA
− _{VCE=2V, IC=50mA}
MHz _{VCE=10V, IE= −100mA, f=10MHz} ∗1
pF VCB=10V, IE=0mA, f=1MHz
ns IC=500mA,
ns ^IB1=50mA
IB2= −50mA
ns _{VCC 25V} ^∗1
∗1 Pulse measurement
zhFE RANK
Q
120-270
R
180-390
zElectrical characteristic curves
10
Single non
repetitive pulse
500µs
1
1ms
10ms
100ms
DC
0.1
1000
Tstg
100
Tf
Ton
Ta=25°C
VCC=25V
IC/IB=10/1
1000
Ta=125°C
100
Ta=25°C
Ta= −40°C
VCE=2V
10
0.01
0.1
1
10
100
COLLECTOR EMITTER VOLTAGE : VCE (V)
Fig.1 Safe operating area
10
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.2 Switching Time
1
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs. collector
current
1000
10
Ta=25°C
VCE=5V
10
IC/IB=10/1
Ta=25°C
100
VCE=2V
1
1
VCE=3V
Ta=125°C
10
1
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector
current
IC/IB=20/1
0.1
0.1
Ta=25°C
Ta= −40°C
0.01
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
IC/IB=10/1
0.01
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage
vs. collector current
vs. collector current
Rev.A
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