2SC5876_1 Datasheet, PDF (1/4 Pages) Rohm – Medium power transistor (60V, 0.5A)

Transistor
2SC5876
Medium power transistor (60V, 0.5A)
2SC5876
zFeatures
1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA)
2) Low saturation voltage, typically
(Typ. : 150mV at IC = 100mA, IB = 10mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2088
zApplications
Small signal low frequency amplifier
High speed switching
zExternal dimensions (Unit : mm)
UMT3
1.25
2.1
(1)Emitter
0.1Min.
Each lead has same dimensions
(2)Base
(3)Collector ^{Abbreviated symbol : VS}
zStructure
NPN Silicon epitaxial planar transistor
zPackaging specifications
Type
2SC5876
Package
Code
Basic ordering unit
(pieces)
Taping
T106
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
ICP
Power dissipation
PC
Junction temperature
Tj
Range of storage temperature
Tstg
∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land.
Limits
60
60
6
0.5
1.0
200
150
−55 to +150
Unit
V
V
V
A
A ^∗1
mW ^∗2
°C
°C
Rev.A
1/3