2SC5873S Datasheet, PDF (2/4 Pages) Rohm – Medium power transistor (30V, 0.5A)

Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
Collector-emitter saturation voltage VCE (sat)
DC current gain
hFE
Transition frequency
fT
Corrector output capacitance
Turn-on time
Storage time
Fall time
∗Non repetitive pulse
Cob
Ton
Tstg
Tf
Min.
30
30
6
−
−
−
120
−
−
−
−
−
Typ.
−
−
−
−
−
150
−
300
5
40
120
50
Max.
−
−
−
1.0
1.0
300
390
−
−
−
−
−
Unit
V
V
V
µA
µA
mV
−
MHz
pF
ns
ns
ns
Condition
IC=1mA
IC=100µA
IE=100µA
VCB=20V
VEB=4V
IC=100mA
IB=10mA
VCE=2V
IC=50mA
VCE=10V
IE= −100mA
f=10MHz
VCB=10V
IE=0mA
f=1MHz
IC=500mA
IB1=50mA
IB2= −50mA
VCC 25V
2SC5873S
∗
∗
zhFE RANK
Q
120−270
R
180−390
zElectrical characteristic curves
10
1
100ms
10ms
0.1
1ms
DC
0.01
Single
non repetitive
0.001 ^Pulsed
0.1
1
10
100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Safe Operating Area
1000
Ta=25°C
1000
100
Ta=25°C
VCC=25V
IC / IB=10 / 1
Tstg
Ton
Tf
10
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.2 Switching Time
10
IC / IB=10 / 1
1000
VCE=2V
100 _Ta=125°C
Ta=25°C
Ta= −40°C
10
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.3 DC Current Gain vs.
Collector Current (Ι)
10
Ta=25°C
100
VCE=5V
VCE=3V
VCE=2V
1
Ta=125°C
Ta=25°C
Ta= −40°C
0.1
1
IC / IB=20 / 1
IC / IB=10 / 1
0.1
10
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.4 DC Current Gain vs.
Collector Current (ΙΙ)
0.01
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current (Ι)
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-Emitter Saturation
Voltage vs. Collector Current (ΙΙ)
Rev.A
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