2SC5873S Datasheet, PDF (1/4 Pages) Rohm – Medium power transistor (30V, 0.5A)

Transistors
2SC5873S
Medium power transistor (30V, 0.5A)
2SC5873S
zFeatures
1) High speed switching.
(Tf : Typ. : 50ns at IC = 500mA)
2) Low saturation voltage, typically
(Typ. : 150mV at IC = 100mA, IB = 10mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2085S
zApplications
Small signal low frequency amplifier
High speed switching
zExternal dimensions (Unit : mm)
SPT
4.0
2.0
0.45
(1) Emitter
(2) Collector
(3) Base
2.5
5.0
0.5 0.45
(1) (2) (3)
Taping specifications
Symbol : C5873S
zStructure
NPN Silicon epitaxial planar transistor
zPackaging specifications
Type
2SC5873S
Package
Code
Basic ordering unit (pieces)
Taping
TP
5000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
VCEO
VEBO
IC
ICP
Power dissipation
PC
Junction temperature
Tj
Range of storage temperature
∗Pw=10ms
Tstg
Limits
30
30
6
0.5
1.0
300
150
−55 to 150
Unit
V
V
V
A
A
∗
mW
°C
°C
Rev.A
1/3